碳注入多晶镍衬底生长少层石墨烯

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472416

K. K. Lee, T. Shiell, J. McCallum, R. Szymanski, A. Soncini, C. Boskovic, D. Jamieson

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引用次数: 0

摘要

将碳离子注入镍膜中，以促进少层石墨烯的生长。在950℃真空退火后，镍膜的微观拉曼测量出现了G峰和2D峰。没有观察到与sp3吸附和石墨烯中空位/缺陷相关的D峰。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate

Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed.

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COMMAD 2012

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