{"title":"p -注入过程中非晶硅薄膜的结构演变","authors":"R. Plugari, E. Vasile, C. Cobiami, D. Dascalu","doi":"10.1109/SMICND.1996.557305","DOIUrl":null,"url":null,"abstract":"The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2/spl times/10/sup 14/ cm/sup -2/-8/spl times/10/sup 15/ cm/sup -2/ and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5/spl times/10/sup 15/ cm/sup -2/. Further increase of the dose to 8/spl times/10/sup 15/ cm/sup -2/ determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Structural evolution of amorphous silicon films during P-implantation\",\"authors\":\"R. Plugari, E. Vasile, C. Cobiami, D. Dascalu\",\"doi\":\"10.1109/SMICND.1996.557305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2/spl times/10/sup 14/ cm/sup -2/-8/spl times/10/sup 15/ cm/sup -2/ and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5/spl times/10/sup 15/ cm/sup -2/. Further increase of the dose to 8/spl times/10/sup 15/ cm/sup -2/ determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural evolution of amorphous silicon films during P-implantation
The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2/spl times/10/sup 14/ cm/sup -2/-8/spl times/10/sup 15/ cm/sup -2/ and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5/spl times/10/sup 15/ cm/sup -2/. Further increase of the dose to 8/spl times/10/sup 15/ cm/sup -2/ determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution.
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