汽车用MOS-SCR结构DPI鲁棒性的实例研究

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2016-09-01 DOI:10.1109/EOSESD.2016.7592538

Yang Xiu, F. Farbiz, A. Salman, Y. Zu, M. Dissegna, G. Boselli, E. Rosenbaum

{"title":"汽车用MOS-SCR结构DPI鲁棒性的实例研究","authors":"Yang Xiu, F. Farbiz, A. Salman, Y. Zu, M. Dissegna, G. Boselli, E. Rosenbaum","doi":"10.1109/EOSESD.2016.7592538","DOIUrl":null,"url":null,"abstract":"This paper presents a case study to demonstrate that transient-triggered ESD protection circuits may fail the DPI automotive requirement. A novel scheme is devised to improve the DPI performance of a MOSSCR protection device while maintaining the system-level ESD performance.","PeriodicalId":239756,"journal":{"name":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Case study of DPI robustness of a MOS-SCR structure for automotive applications\",\"authors\":\"Yang Xiu, F. Farbiz, A. Salman, Y. Zu, M. Dissegna, G. Boselli, E. Rosenbaum\",\"doi\":\"10.1109/EOSESD.2016.7592538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a case study to demonstrate that transient-triggered ESD protection circuits may fail the DPI automotive requirement. A novel scheme is devised to improve the DPI performance of a MOSSCR protection device while maintaining the system-level ESD performance.\",\"PeriodicalId\":239756,\"journal\":{\"name\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2016.7592538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2016.7592538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了一个案例研究，以证明瞬态触发ESD保护电路可能无法满足汽车DPI的要求。设计了一种新的方案来提高MOSSCR保护器件的DPI性能，同时保持系统级ESD性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Case study of DPI robustness of a MOS-SCR structure for automotive applications

This paper presents a case study to demonstrate that transient-triggered ESD protection circuits may fail the DPI automotive requirement. A novel scheme is devised to improve the DPI performance of a MOSSCR protection device while maintaining the system-level ESD performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

自引率

0.00%

发文量