J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren
{"title":"InGaAsP/InP增益杠杆可调谐激光器","authors":"J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren","doi":"10.1109/ISLC.2004.1382799","DOIUrl":null,"url":null,"abstract":"A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAsP/InP gain-levered tunable lasers\",\"authors\":\"J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren\",\"doi\":\"10.1109/ISLC.2004.1382799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.