H. Maune, O. Bengtsson, F. Golden, M. Sazegar, R. Jakoby, W. Heinrich
{"title":"基于BST厚膜实现阻抗匹配网络的可调谐射频gan功率晶体管","authors":"H. Maune, O. Bengtsson, F. Golden, M. Sazegar, R. Jakoby, W. Heinrich","doi":"10.23919/EUMC.2012.6459076","DOIUrl":null,"url":null,"abstract":"In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Tunable RF GaN-power transistor implementing impedance matching networks based on BST thick films\",\"authors\":\"H. Maune, O. Bengtsson, F. Golden, M. Sazegar, R. Jakoby, W. Heinrich\",\"doi\":\"10.23919/EUMC.2012.6459076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.\",\"PeriodicalId\":243164,\"journal\":{\"name\":\"2012 7th European Microwave Integrated Circuit Conference\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMC.2012.6459076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2012.6459076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunable RF GaN-power transistor implementing impedance matching networks based on BST thick films
In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
