分栅沟槽mosfet中的分布场极板效应

2023 35th International Conference on Microelectronic Test Structure (ICMTS) Pub Date : 2023-03-27 DOI:10.1109/ICMTS55420.2023.10094167

R. Tambone, A. Ferrara, F. Magrini, A. Hoffmann, A. Wood, G. Noebauer, E. Gondro, R. Hueting

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引用次数: 0

摘要

快速电瞬变会在沟槽mosfet内部产生分布效应，可能导致器件失效。结合一种新的在线传输脉冲(TLP)装置，提出了一种新的测试结构来研究这些分布效应。在晶片上进行TLP测量，并结合TCAD和SPICE模拟来预测瞬态过程中场板电位的时空演变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Distributed field plate effects in split-gate trench MOSFETs

Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.

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2023 35th International Conference on Microelectronic Test Structure (ICMTS)

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