带分段发射极的应变Si/SiGe HBT补偿热效应的布局设计

Xinyi Zhao, D. Jin, Wanrong Zhang, Xiao Wang, Yanling Guo, Di Wang
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引用次数: 0

摘要

基于已建立的节段发射极应变Si/SiGe HBT热网络,研究了节段间距和节段数对峰值温度的影响。增加段间距和段数可以降低峰值温度,降低加热耦合系数,从而提高温度均匀性。在此基础上,提出了一种具有多节段发射极和非均匀节段间距的应变硅SiGe HBT,以进一步补偿自热效应和热耦合效应。
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Layout design of strained Si/SiGe HBT with segmented emitter to compensate the thermal effects
Based on the established thermal network of strained Si/SiGe HBT with segmented emitter, the effect of segment spacing and segment number on the peak temperature is studied. Increase both of segment spacing and segment number could lower the peak temperature, decrease the heating coupling factor, and hence improve the temperature uniformity. Furthermore, a novel strained-Si SiGe HBT with multi-segmented emitter and non-uniform segment spacing is proposed to further compensate the self-heating effect and the thermal coupling effect.
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