低噪声InP hemt中栅极通道距离的影响

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562602

P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn

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引用次数: 3

摘要

研究了栅极-沟道距离(势垒层厚度)对130 nm栅极长度InP hemt中与噪声相关的电学性能的影响。与11nm阻挡层厚度相比，8nm阻挡层厚度的hemt的夹断质量有所提高。当栅极偏压为-1V时，栅极泄漏从1 μA/mm增加到7 μA/mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of gate-channel distance in low-noise InP HEMTs

The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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