Yun-Xia Bai, Chun-sheng Guo, S. Feng, Kaikai Ding, Si-Xiang Zhuang, Rong Su
{"title":"大功率VDMOSFET的可靠性评估","authors":"Yun-Xia Bai, Chun-sheng Guo, S. Feng, Kaikai Ding, Si-Xiang Zhuang, Rong Su","doi":"10.1109/IPFA.2009.5232635","DOIUrl":null,"url":null,"abstract":"The specific application of power devices has imposed the requirement for intensive investigation of their reliability. In this paper we have investigated the reliability and failure mechanism of power VDMOS. In constant-stress accelerated life test, the three different temperatures (150°C, 165°C and 180°C) are imposed on the devices. Under the bias VDS=7.5V, IDS=0.8A, and the channel temperature T=117°C, the average lifetime is 3.67×106 h , the activation energy E is 0.54eV, and the main failure mechanism is gate damage.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability evaluation of power VDMOSFET\",\"authors\":\"Yun-Xia Bai, Chun-sheng Guo, S. Feng, Kaikai Ding, Si-Xiang Zhuang, Rong Su\",\"doi\":\"10.1109/IPFA.2009.5232635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The specific application of power devices has imposed the requirement for intensive investigation of their reliability. In this paper we have investigated the reliability and failure mechanism of power VDMOS. In constant-stress accelerated life test, the three different temperatures (150°C, 165°C and 180°C) are imposed on the devices. Under the bias VDS=7.5V, IDS=0.8A, and the channel temperature T=117°C, the average lifetime is 3.67×106 h , the activation energy E is 0.54eV, and the main failure mechanism is gate damage.\",\"PeriodicalId\":210619,\"journal\":{\"name\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2009.5232635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2009.5232635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The specific application of power devices has imposed the requirement for intensive investigation of their reliability. In this paper we have investigated the reliability and failure mechanism of power VDMOS. In constant-stress accelerated life test, the three different temperatures (150°C, 165°C and 180°C) are imposed on the devices. Under the bias VDS=7.5V, IDS=0.8A, and the channel temperature T=117°C, the average lifetime is 3.67×106 h , the activation energy E is 0.54eV, and the main failure mechanism is gate damage.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
