一种180nm CMOS制程的毫米波正交压控振荡器

Z. Kashani, A. Nabavi
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引用次数: 2

摘要

本文提出了一种适用于标准180nm CMOS技术的58 ghz低相位噪声正交压控振荡器(QVCO)的新电路拓扑结构。选择低功耗、提高相位噪声性能的低相位噪声Colpitts振荡器核心,并采用自注入耦合,在58GHZ载波1MHz偏移时相位噪声为-106 dBc/Hz。整个电路的功耗,包括缓冲器和主核心,在1.8V电源下为10.6mA。与以往的设计相比,该设计具有最低的相位噪声和更好的性能指标。
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A low-phase-noise millimeter wave quadrature VCO in 180nm CMOS process
This paper presents a new circuit topology for a 58-GHz low phase noise quadrature voltage control oscillator (QVCO) in a standard 180nm CMOS technology. Selecting a low phase noise Colpitts oscillator core with low power consumption and improved phase noise performance, and using self-injection coupling result in a phase noise of -106 dBc/Hz at 1MHz offset of a 58GHZ carrier. The power consumption for the entire circuit, including the buffers and main cores, is 10.6mA from a 1.8V supply. This design has the lowest phase noise and better figure-of-merits compared to previous works.
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