基于细丝的互补电阻开关器件的Verilog-A建模

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626380

T. Kalkur, M. Pawlikiewicz

{"title":"基于细丝的互补电阻开关器件的Verilog-A建模","authors":"T. Kalkur, M. Pawlikiewicz","doi":"10.1109/NANO.2018.8626380","DOIUrl":null,"url":null,"abstract":"This paper presents a compact model implemented in Verilog-A for complementary resistive switching (CRS) devices based on nickel oxide (NiO). Device characterization enabled the creation and enhancement of the model for the complementary resistive switching RRAM including temperature dependence which is implemented in Verilog- A and could be used in circuit simulators for design of RRAM memory circuits.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Verilog-A modeling of filamentary-based complementary resistance switching devices\",\"authors\":\"T. Kalkur, M. Pawlikiewicz\",\"doi\":\"10.1109/NANO.2018.8626380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a compact model implemented in Verilog-A for complementary resistive switching (CRS) devices based on nickel oxide (NiO). Device characterization enabled the creation and enhancement of the model for the complementary resistive switching RRAM including temperature dependence which is implemented in Verilog- A and could be used in circuit simulators for design of RRAM memory circuits.\",\"PeriodicalId\":425521,\"journal\":{\"name\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2018.8626380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2018.8626380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文提出了一个在Verilog-A中实现的基于氧化镍(NiO)的互补电阻开关(CRS)器件的紧凑模型。器件特性使互补电阻开关RRAM模型的创建和增强成为可能，包括在Verilog- A中实现的温度依赖，并可用于RRAM存储电路设计的电路模拟器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Verilog-A modeling of filamentary-based complementary resistance switching devices

This paper presents a compact model implemented in Verilog-A for complementary resistive switching (CRS) devices based on nickel oxide (NiO). Device characterization enabled the creation and enhancement of the model for the complementary resistive switching RRAM including temperature dependence which is implemented in Verilog- A and could be used in circuit simulators for design of RRAM memory circuits.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

自引率

0.00%

发文量