非易失性FPGA交叉开关中硫系选择器的特性研究

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782960

H. Numata, N. Banno, K. Okamoto, N. Iguchi, H. Hada, M. Hashimoto, T. Sugibayashi, T. Sakamoto, M. Tada

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引用次数: 1

摘要

溅射沉积的GexSe1−x薄膜的特征，之前的器件制造的选择器。富硒膜具有GeSe4/2四面体结构，结晶温度高于富锗膜。印刷银浆电极用于I-V测量，非晶富硒GexSe1−x薄膜显示出良好的开关性能，其开关比为4.8 × 104。

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Characterization of Chalcogenide Selectors for Crossbar Switch Used in Nonvolatile FPGA

Sputter deposited GexSe1−x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich GexSe1−x film shows the good switching property for the selector with an on/off ratio of 4.8 × 10⁴.

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2019 Silicon Nanoelectronics Workshop (SNW)

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