CMOS BEOL上RRAM集成的氧化铟纳米结构优化

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626323

P. Guenery, E. A. L. León Pérez, K. Ayadi, J. Moeyaert, S. Labau, N. Baboux, D. Deleruyelle, L. Militaru, S. Blonkowski, T. Baron, A. Souifi

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引用次数: 1

摘要

本工作报告的集成氧化铟(In2O3)纳米晶体(NCs)的电阻性随机存取存储器(RRAM)的应用。基于MOCVD和ALD沉积的RRAM集成是与后端离线CMOS完全兼容的制造工艺。双极开关行为明显与In2O3 NC有关。测量了HRS/LRS比高于104的第一个RRAM原型。器件参数色散主要观察Vreset。NC密度从3增加。108厘米-2到2。10 10 cm-2，平均NC直径从12 nm减少到4 nm。优化NC的尺寸、色散和密度最终有望降低观测到的参数色散。

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Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL

this work report on the integration of indium oxide (In2O3) nanocrystals (NCs) for Resistive Random Access Memory (RRAM) applications. The RRAM integration based on MOCVD and ALD depositions is fully compatible fabrication process with CMOS of back-end-off-line. A bipolar switching behavior is clearly linked to In2O3 NC. First RRAM prototypes with HRS/LRS ratios higher than 104 are measured. Device parameter dispersion is observed mainly for Vreset. The NC density has been increased from 3. 108 cm-2 to 2. 10 10 cm-2 with an average NC diameter reduced from 12 nm to 4 nm. The optimization of NC's size dispersion and density is finally expected to reduce the observed parameter dispersion.

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2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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