{"title":"功率MOSFET模型的评估","authors":"I. Budihardjo, P. Lauritzen","doi":"10.1109/NORTHC.1994.638967","DOIUrl":null,"url":null,"abstract":"The device models are used in simulation of power converter circuits to enable accurate simulation of switching waveforms. Two selected power MOSFET models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. Any proprietary model can be evaluated using three simple simulations.","PeriodicalId":218454,"journal":{"name":"Proceedings of NORTHCON '94","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Evaluation of power MOSFET models\",\"authors\":\"I. Budihardjo, P. Lauritzen\",\"doi\":\"10.1109/NORTHC.1994.638967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The device models are used in simulation of power converter circuits to enable accurate simulation of switching waveforms. Two selected power MOSFET models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. Any proprietary model can be evaluated using three simple simulations.\",\"PeriodicalId\":218454,\"journal\":{\"name\":\"Proceedings of NORTHCON '94\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of NORTHCON '94\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NORTHC.1994.638967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of NORTHCON '94","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORTHC.1994.638967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The device models are used in simulation of power converter circuits to enable accurate simulation of switching waveforms. Two selected power MOSFET models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. Any proprietary model can be evaluated using three simple simulations.
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