1.3-μm npn-AlGaInAs/InP晶体管激光器的激光特性——基层结构的依赖性

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880520

Takumi Yoshida, M. Yukinari, Takaaki Kaneko, N. Nishiyama, S. Arai

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引用次数: 2

摘要

通过仿真和制作，研究了1.3-μm npn-AlGaInAs/InP晶体管激光器(TL)随基层结构变化的激光特性。结果表明，在电流增益相同的情况下，厚度越薄、带隙越宽，激光器的激光特性越好。

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Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser — Dependence of the base layer structure

Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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