Terahertz field driven active switching in vanadium dioxide-based multilayer metasurfaces

We propose a multilayer meta-device in metal/insulator/metal configuration that exploits broadside coupling of the incident THz radiation to the metastructure mediated through the VO2 spacer layer. We theoretically demonstrate that, by changing the field strength of the incident radiation, the field confinement and thus, the spectral response of the structure can be modulated by means of initiating insulator to metal phase transition in VO2 spacer layer by exploiting the strong electron-electron correlation in such structures. Hence, the all-optical modulation of the THz field can be attained by means of active tuning. The outcomes of our work hold tremendous potential in attaining active control of metamaterials by all-optical route as well as pave the way for ultrafast sensing, switching applications and nonlinear studies.