F. Sonnerat, R. Pilard, F. Gianesello, F. Le Pennec, C. Person, D. Gloria
{"title":"集成130nm CMOS SOI技术的4G天线调谐器","authors":"F. Sonnerat, R. Pilard, F. Gianesello, F. Le Pennec, C. Person, D. Gloria","doi":"10.1109/SIRF.2012.6160134","DOIUrl":null,"url":null,"abstract":"In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"4G antenna tuner integrated in a 130 nm CMOS SOI technology\",\"authors\":\"F. Sonnerat, R. Pilard, F. Gianesello, F. Le Pennec, C. Person, D. Gloria\",\"doi\":\"10.1109/SIRF.2012.6160134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).\",\"PeriodicalId\":339730,\"journal\":{\"name\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2012.6160134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2012.6160134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4G antenna tuner integrated in a 130 nm CMOS SOI technology
In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).