集成130nm CMOS SOI技术的4G天线调谐器

F. Sonnerat, R. Pilard, F. Gianesello, F. Le Pennec, C. Person, D. Gloria
{"title":"集成130nm CMOS SOI技术的4G天线调谐器","authors":"F. Sonnerat, R. Pilard, F. Gianesello, F. Le Pennec, C. Person, D. Gloria","doi":"10.1109/SIRF.2012.6160134","DOIUrl":null,"url":null,"abstract":"In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"4G antenna tuner integrated in a 130 nm CMOS SOI technology\",\"authors\":\"F. Sonnerat, R. Pilard, F. Gianesello, F. Le Pennec, C. Person, D. Gloria\",\"doi\":\"10.1109/SIRF.2012.6160134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).\",\"PeriodicalId\":339730,\"journal\":{\"name\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2012.6160134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2012.6160134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

为了抵消由于与环境相互作用而导致的天线阻抗失配,一种解决方案是在前端模块和天线之间使用调谐器。本文介绍了一种集成意法半导体(STMicroelectronics) 130 nm CMOS SOI技术的4G天线调谐器,工作频率为2500 ~ 2690 MHz。由于高功率CMOS SOI数字可调谐电容(dtc),所提出的调谐器能够匹配50 Ω天线,其VSWR退化高达5:1。最小的输入反射系数达到了-10 dB,并获得了很好的插入损耗(对于初始驻波比为5:1的天线,最小损耗为3.5 dB)。
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4G antenna tuner integrated in a 130 nm CMOS SOI technology
In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).
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