{"title":"具有非对称电流比的宽带三级多尔蒂功率放大器","authors":"Ayushi Barthwal, K. Rawat, S. Koul","doi":"10.1109/IMARC.2016.7939628","DOIUrl":null,"url":null,"abstract":"This paper presents the analysis and design of wideband tri-stage Doherty Power Amplifier (DPA). The DPA is implemented using three 10-W packaged GaN-HEMT devices from CREE. The measured drain efficiency is more than 50% and 45% over the frequency range of 700MHz to 1000MHz at 6dB and 9.54dB output power back off (OPBO) respectively. The peak drain efficiency is better than 60% over this 300 MHz band. Measurements with 10MHz LTE signal with PAPR of 11.89dB shows the average drain efficiency of 45.7% at average power of 32.04 dBm at 850MHz. The corresponding adjacent channel power ratio is better than −46.27dBc after using digital predistortion algorithm.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Wideband tri-stage Doherty Power Amplifier with asymmetric current ratios\",\"authors\":\"Ayushi Barthwal, K. Rawat, S. Koul\",\"doi\":\"10.1109/IMARC.2016.7939628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the analysis and design of wideband tri-stage Doherty Power Amplifier (DPA). The DPA is implemented using three 10-W packaged GaN-HEMT devices from CREE. The measured drain efficiency is more than 50% and 45% over the frequency range of 700MHz to 1000MHz at 6dB and 9.54dB output power back off (OPBO) respectively. The peak drain efficiency is better than 60% over this 300 MHz band. Measurements with 10MHz LTE signal with PAPR of 11.89dB shows the average drain efficiency of 45.7% at average power of 32.04 dBm at 850MHz. The corresponding adjacent channel power ratio is better than −46.27dBc after using digital predistortion algorithm.\",\"PeriodicalId\":341661,\"journal\":{\"name\":\"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2016.7939628\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2016.7939628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wideband tri-stage Doherty Power Amplifier with asymmetric current ratios
This paper presents the analysis and design of wideband tri-stage Doherty Power Amplifier (DPA). The DPA is implemented using three 10-W packaged GaN-HEMT devices from CREE. The measured drain efficiency is more than 50% and 45% over the frequency range of 700MHz to 1000MHz at 6dB and 9.54dB output power back off (OPBO) respectively. The peak drain efficiency is better than 60% over this 300 MHz band. Measurements with 10MHz LTE signal with PAPR of 11.89dB shows the average drain efficiency of 45.7% at average power of 32.04 dBm at 850MHz. The corresponding adjacent channel power ratio is better than −46.27dBc after using digital predistortion algorithm.
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