20/30 GHz GaAs MESFET倍频链电路设计及调频噪声特性

1983 13th European Microwave Conference Pub Date : 1983-09-01 DOI:10.1109/EUMA.1983.333236

T. Shima, T. Takano, T. Katoh, H. Sugawara, H. Komizo

{"title":"20/30 GHz GaAs MESFET倍频链电路设计及调频噪声特性","authors":"T. Shima, T. Takano, T. Katoh, H. Sugawara, H. Komizo","doi":"10.1109/EUMA.1983.333236","DOIUrl":null,"url":null,"abstract":"Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains\",\"authors\":\"T. Shima, T. Takano, T. Katoh, H. Sugawara, H. Komizo\",\"doi\":\"10.1109/EUMA.1983.333236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.\",\"PeriodicalId\":105436,\"journal\":{\"name\":\"1983 13th European Microwave Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1983 13th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1983.333236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1983 13th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1983.333236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

使用两级GaAs MESFET倍频器开发了20/30 GHz频段的倍频链。它们在18 GHz时提供11dbm输出功率和4db增益，在30 GHz时提供4dbm输出功率和5db损耗。电路设计和调频噪声特性也将被描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains

Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.

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1983 13th European Microwave Conference

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