采用应变效应核壳结构的垂直纳米线隧道场效应晶体管

Jun-Sik Yoon, C. Baek
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引用次数: 0

摘要

隧道场效应晶体管(TFET)是替代传统MOSFET超低功耗应用的有前途的候选器件之一。tfet服从带间隧穿,从而达到低于60 mv /dec的亚阈值摆幅。然而,即使在高工作电压下,也要权衡小的导通电流。在这项工作中,与其他硅基tfet相比,SiGe核壳纳米线tfet具有优越的直流特性。
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Vertical Nanowire Tunneling Field-Effect Transistors adopting Core-shell Structure with Strain Effects
Tunneling field-effect transistor (TFET) is one of the promising candidates to substitute conventional MOSFET for ultra-low power applications. TFETs obey band-to-band tunneling, thus attaining sub-60-mV/dec of the subthreshold swing. However, there is a trade-off of small on-state currents even at high operation voltage. In this work, the SiGe core-shell nanowire TFETs are introduced by showing superior DC characteristics compared to other silicon-based TFETs.
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