{"title":"2.5 ppm完全集成的CMOS模拟TCXO","authors":"K. Nemoto, Kimiaki Sato","doi":"10.1109/FREQ.2001.956373","DOIUrl":null,"url":null,"abstract":"A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 /spl mu/m CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38/spl times/1.93 mm/sup 2/. The temperature stability is better than /spl plusmn/2.5 ppm over -30 to 85/spl deg/C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 2.5 ppm fully integrated CMOS analog TCXO\",\"authors\":\"K. Nemoto, Kimiaki Sato\",\"doi\":\"10.1109/FREQ.2001.956373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 /spl mu/m CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38/spl times/1.93 mm/sup 2/. The temperature stability is better than /spl plusmn/2.5 ppm over -30 to 85/spl deg/C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively.\",\"PeriodicalId\":369101,\"journal\":{\"name\":\"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2001.956373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2001.956373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 /spl mu/m CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38/spl times/1.93 mm/sup 2/. The temperature stability is better than /spl plusmn/2.5 ppm over -30 to 85/spl deg/C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively.
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