4H-SiC二极管静态和开关行为的自洽模型

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650594

S. Bellone, F. D. Della Corte, L. Di Benedetto, Loredana Freda Albanese, G. Licciardo

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引用次数: 10

摘要

提出了一种新的模型，该模型能够准确地描述4H-SiC p-i-n二极管中少数载流子的时空分布。将电流、电压和载流子分布的解析特性与数值模拟和实验结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A self-consistent model of the static and switching behaviour of 4H-SiC diodes

A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.

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CAS 2010 Proceedings (International Semiconductor Conference)

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