零偏置gaassb基后向二极管非线性特性的改进

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562640

Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara

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引用次数: 6

摘要

使用与InP衬底晶格匹配的p-GaAsSb/i-InAlAs/n-InGaAs后向二极管，在零偏置下获得了49.4 V-1的高曲率系数(γ)。γ值高于理想肖特基二极管(39.6 V-1)。具有如此高y的后向二极管适用于混频器。优化了p-GaAsSb层的掺杂浓度，获得了理想的后向二极管能带结构。使用直径为3.0 μm的二极管，在94 GHz时阻抗匹配电压灵敏度(βv,opt)估计为6069 V/W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes

A high curvature coefficient (γ) of 49.4 V-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (βv,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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