利用三维TCAD比较LFET和VFET的寄生元件

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242312

Minsoo Kim, Hyungwoo Ko, Myounggon Kang, Hyungcheol Shin

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引用次数: 0

摘要

在这项工作中，我们使用3D技术计算机辅助设计(TCAD)比较了基于ITRS 2015的横向纳米线场效应管(LFET)和垂直纳米线场效应管(VFET)之间的寄生元件。我们比较了寄生电阻和寄生电容与沟道厚度的关系。此外，我们分析了寄生元件对器件性能的影响，并提出了器件缩放的方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of parasitic components between LFET and VFET using 3D TCAD

In this work, we compare parasitic components between lateral nanowire-FET (LFET) and vertical nanowire-FET (VFET) based on ITRS 2015 using 3D Technology Computer-aided Design (TCAD). We compare the parasitic resistances and capacitances in accordance with channel thickness. Further, we analyzed the effects of parasitic components on device performance and proposed the direction of device scaling.

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2017 Silicon Nanoelectronics Workshop (SNW)

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