RF-MEMS开关模块采用0.25 μm BiCMOS技术

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160150

M. Kaynak, M. Wietstruck, W. Zhang, J. Drews, R. Scholz, D. Knoll, F. Korndorfer, C. Wipf, K. Schulz, M. Elkhouly, K. Kaletta, M. Suchodoletz, K. Zoschke, M. Wilke, O. Ehrmann, V. Muhlhaus, G. Liu, T. Purtova, A. Ulusoy, H. Schumacher, B. Tillack

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引用次数: 13

摘要

介绍了一种BiCMOS嵌入式RF-MEMS开关模块。该模块由四个主要模块组成:1)RF-MEMS开关技术，2)设计套件实现的开关模型，3)高压(HV)生成和数字接口，4)柔性封装。重点介绍了RF-MEMS开关技术的触点模型，特别是下电状态的触点模型。电磁(EM)和集总元模型被证明集成到铸造工艺设计工具包(PDK)。介绍了片上集成的高压产生和控制电路。还介绍了一种柔性封装技术，用于封装单独的交换机或带有多个交换机的电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RF-MEMS switch module in a 0.25 μm BiCMOS technology

A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state. Electromagnetic (EM) and lumped-element models are demonstrated to integrate into foundry process design kit (PDK). The integrated on-chip HV generation and control circuitries are described. A flexible packaging technique is also introduced to package either standalone switches or circuits with several switches.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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