J. Z. He, J.B. Xu, M.S. Xu, J. Xu, C.H. Ng, I. Wilson
{"title":"Si(111)氧化过程中有序结构的直接观察","authors":"J. Z. He, J.B. Xu, M.S. Xu, J. Xu, C.H. Ng, I. Wilson","doi":"10.1109/HKEDM.2000.904209","DOIUrl":null,"url":null,"abstract":"Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology: why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Direct observation of ordered structures during oxidation of Si(111)\",\"authors\":\"J. Z. He, J.B. Xu, M.S. Xu, J. Xu, C.H. Ng, I. Wilson\",\"doi\":\"10.1109/HKEDM.2000.904209\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology: why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904209\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct observation of ordered structures during oxidation of Si(111)
Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology: why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.
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