带隙差分电流约束GaInNAs激光器

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382774

T. Katsuyama, J. Hashimoto, T. Saito, T. Yamada, T. Ishizuka, Y. Tsuji, K. Koyama, Y. Iguchi, K. Fujii, S. Takagishi, A. Ishida

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摘要

介绍了利用带隙差分实现由简单电流约束结构组成的实折射率引导GaInNAs量子阱激光器的操作。电流约束方法不仅可以制造单一的低成本光学器件，而且可以制造由各种波导和有源器件组成的光子集成电路。

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Bandgap difference current confinement GaInNAs lasers

Operation of real index guided GaInNAs quantum well lasers consisting of simple current confinement structure using bandgap difference is presented. The current confinement method is found to be useful to fabricate not only a single low cost optical devices but also photonic integrated circuit consisting with various waveguides and active devices.

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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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