一种新的毫米波频率倒装互连表征的原位方法

Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects Pub Date : 2004-05-09 DOI:10.1109/SPI.2004.1409004

U. Pfeiffer, A. Chandrasekhar, T. Zwick

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引用次数: 3

摘要

在本文中，我们提出了一种替代的非破坏性测量技术的倒装芯片互连高达40 GHz的性能。所提出的方法展开了原始的倒装芯片互连，不包括实际安装的硅芯片的任何发射结构。概述了芯片封装协同设计的初步建模方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new in-situ approach to flip-chip interconnect characterization up to millimeter wave frequencies

In this paper we present the performance of flip-chip interconnects up to 40 GHz based on an alternative non-destructive measurement technique. The presented method unfolds the raw flip-chip interconnect, excluding any launch structures for an actually mounted silicon chip. A preliminary modeling approach for chip-package co-design is outlined.

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Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects

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