基于动态塞贝克效应的热电红外传感器MEMS元件机电特性建模

G. Demin, R. Z. Khafizov, Evgeny A. Fetisov, N. Djuzhev
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引用次数: 0

摘要

在这项工作中,我们研究了具有纳米级可切换热电偶的红外(IR)传感器的MEMS(微机电系统)元件的机电性能,用于其两种有前途的设计类型,这取决于正方形介电膜上电极的几何形状,当它们分别放置在膜的两侧(设计1)和沿其周长(设计2)时,控制其静电位移。仿真结果表明,第二次设计的MEMS元件与第一次设计的MEMS元件相比,薄膜表面与衬底空腔底部接触所对应的阈值电压几乎降低了5倍,从而耗散了红外辐射在薄膜中积累的热量并开启了微系统。由于薄膜与导热层的接触面积更大,从而减少了将MEMS元件恢复到原始状态所需的复位时间,这使得第二种设计不仅在能耗方面更有前景,而且在速度方面也更有前景。所得结果可用于制造工作在红外范围内的新一代矩阵光电探测器器件。
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Modeling the Electromechanical Properties of the MEMS Element of a Thermoelectric Infrared Sensor Based on the Dynamic Seebeck Effect
In this work, we studied the electromechanical properties of the MEMS (micro-electro-mechanical system) element of an infrared (IR) sensor with nanoscale switchable thermocouples for two promising types of its design, depending on the geometry of the electrodes on a square dielectric membrane, controlling its electrostatic displacement - when they are placed on opposite sides of the membrane (design 1) and along its perimeter (design 2), respectively. From the simulation it follows that the threshold voltage corresponding to the contact of the surface of the membrane and the bottom of the cavity in the substrate, as a result of which the heat accumulated in the membrane by IR radiation is dissipated and the microsystem is switched, is almost 5 times lower for the second design of MEMS element than for the first one. It makes the second design more promising not only in terms of energy consumption, but also speed, due to the larger contact area of the membrane with the heat-conducting layer, which reduces the reset time required to return the MEMS element to its original state. The results obtained can be used to create a new generation of matrix photodetector devices operating in the infrared range.
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