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引用次数: 0

摘要

系统级封装(SIP)电路一旦部署就显示出硬故障。脱囊后,芯片一角可见明显损伤。好像发生了局部燃烧。利用3d - x射线和切片分析对该装置进行结构分析,发现该装置由两个平行结构组成。燃烧理论上应该是随机的。缺少银膏胶粘剂填充物被认为是造成这种损坏的根本原因。通过x射线成像的进一步调查显示,芯片没有完全焊接。由于器件在工作过程中可以达到非常高的温度,由于银浆粘合剂的缺乏,导致某些区域的功耗较差,从而导致损坏。
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Failure Analysis for SIP IC EOS fail
A System-In-Package (SIP) circuit displayed a hard failure once deployed. After decapsulation, visible damages could be observed in one corner of the chip. as if some local burning occurred. Structural analysis of the device using 3D-Xray and slice analysis, revealed that it was constituted of two parallel structures. burning should be random in theory. Missing silver paste adhesive filling was identified as a root cause for this damage. Further investigations through X-ray imaging showed that the chip was not fully welded. Since the device can reach very high temperature during operation, the lack of silver paste adhesive led to poor power dissipation in some area which translated in damages.
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