{"title":"低信号域下EDWA频谱增益的高进动测量装置","authors":"M. Asif, M. Haithem, M. Zafrullah","doi":"10.1109/HONET.2008.4810222","DOIUrl":null,"url":null,"abstract":"A high precision measurement setup has been realized especially for the spectral gain of erbium doped waveguide amplifier (EDWA) in a low signal regime. Each part of the set-up is shown in detail from laser light sources, objectives and tapered fibers for performing the coupling task to the light collection system and analyzing the transmitted signal from optical waveguide devices. The main individuality of this setup is that it can be aligned up to 1 nm displacement accuracy with the help of nano-positioner. Also this setup can be used for structural analysis, mode profile, and loss measurements by using different techniques of various Si-based waveguides in different geometries.","PeriodicalId":433243,"journal":{"name":"2008 International Symposium on High Capacity Optical Networks and Enabling Technologies","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Precession Measurement Setup for the Spectral Gain of EDWA in a Low Signal Regime\",\"authors\":\"M. Asif, M. Haithem, M. Zafrullah\",\"doi\":\"10.1109/HONET.2008.4810222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high precision measurement setup has been realized especially for the spectral gain of erbium doped waveguide amplifier (EDWA) in a low signal regime. Each part of the set-up is shown in detail from laser light sources, objectives and tapered fibers for performing the coupling task to the light collection system and analyzing the transmitted signal from optical waveguide devices. The main individuality of this setup is that it can be aligned up to 1 nm displacement accuracy with the help of nano-positioner. Also this setup can be used for structural analysis, mode profile, and loss measurements by using different techniques of various Si-based waveguides in different geometries.\",\"PeriodicalId\":433243,\"journal\":{\"name\":\"2008 International Symposium on High Capacity Optical Networks and Enabling Technologies\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Symposium on High Capacity Optical Networks and Enabling Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HONET.2008.4810222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Symposium on High Capacity Optical Networks and Enabling Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HONET.2008.4810222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Precession Measurement Setup for the Spectral Gain of EDWA in a Low Signal Regime
A high precision measurement setup has been realized especially for the spectral gain of erbium doped waveguide amplifier (EDWA) in a low signal regime. Each part of the set-up is shown in detail from laser light sources, objectives and tapered fibers for performing the coupling task to the light collection system and analyzing the transmitted signal from optical waveguide devices. The main individuality of this setup is that it can be aligned up to 1 nm displacement accuracy with the help of nano-positioner. Also this setup can be used for structural analysis, mode profile, and loss measurements by using different techniques of various Si-based waveguides in different geometries.