高速压电力显微镜:纳米级和纳秒级的畴切换直接观察

R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey
{"title":"高速压电力显微镜:纳米级和纳秒级的畴切换直接观察","authors":"R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey","doi":"10.1109/ISAF.2008.4693907","DOIUrl":null,"url":null,"abstract":"High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Speed Piezo Force Microscopy: Nanoscale and nanosecond direct observations of domain switching\",\"authors\":\"R. Nath, N. Polomoff, J. Bosse, Y. Chu, R. Ramesh, B. Huey\",\"doi\":\"10.1109/ISAF.2008.4693907\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.\",\"PeriodicalId\":228914,\"journal\":{\"name\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2008.4693907\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

高速压电力显微镜(HSPFM)是原子力显微镜(AFM)的一种新的变化,用于直接测量纳米尺度的畴切换动力学。图像采集从标准压电力显微镜的几分钟加速到HSPFM的几分之一秒。因此,在原位域切换期间,连续图像的电影允许高空间和时间分辨率,每像素实现不到500纳秒的极化。因此,单个缺陷对畴形核、生长机制、开关速度和开关能量的影响是唯一明显的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
High Speed Piezo Force Microscopy: Nanoscale and nanosecond direct observations of domain switching
High Speed Piezo Force Microscopy (HSPFM) is a new variation of Atomic Force Miroscopy (AFM) for direct nanoscale measurements of domain switching dynamics. Image acquisition is accelerated from several minutes for standard piezo force microscopy to as fast as a fraction of a second for HSPFM. Movies of consecutive images during in-situ domain switching therefore allow high spatial and temporal resolution, with less than 500 nanosecond poling per pixel achieved. The influence of individual defects on domain nucleation, growth mechanisms, switching speed, and switching energy are therefore uniquely apparent.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Tunable dielectric properties of lead strontium titanate thin films by sol-gel technique Towards high performing ferroelectric thin films Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures Passive magnetic coupling to enhance piezoelectric cantilever response in energy scavenging applications Dielectric performances of antiferroelectric ceramics and application to capacitors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1