低带外噪声LTE发射机与电流模式的方法

Nicola Codega, A. Liscidini, R. Castello
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引用次数: 3

摘要

提出了一种适用于多标准无线通信(包括LTE)的55nm CMOS电流模式发射器,该发射器只需要1.5mm2(带有4个输出端口)。该电路由两部分组成:a /B类上转换器和基带,包括DAC, VGA,低通滤波器(两个双源加一个无源一阶)和a /B类信号调节器。将三阶滤波器与a /B类调节器相结合,可以降低电流消耗和rx波段噪声注入。对于LTE10,在4dBm和-10dBm输出功率下的功耗分别为96mW和34mW。完整的发射机在30MHz偏移时提供-158dBc/Hz的rx波段噪声注入。
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A low out-of-band noise LTE transmitter with current-mode approach
A 55nm CMOS current-mode transmitter for multistandard wireless communications (including LTE) that requires only 1.5mm2 (with 4 output ports) is presented. The circuit is made up of two portions: a class A/B up-converter and a baseband that includes DAC, VGA, low-pass filter (two Biquad plus a passive first order) and class A/B signal conditioner. Combining a third order filter with the class A/B conditioner results in a reduction of both current consumption and RX-band noise injection. For LTE10, the consumption is 96mW and 34mW at 4dBm and at -10dBm output power, respectively. The complete transmitter gives -158dBc/Hz RX-band noise injection at 30MHz offset.
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