混合CMOS忆阻电路和系统的SPICE模拟器

Yuhao Wang, Wei Fei, Hao Yu
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引用次数: 16

摘要

忆阻器是一种双端非线性无源电气器件。近年来,忆阻器在非易失性存储器、可重构计算和神经网络等领域的应用越来越广泛。然而,在设计混合CMOS忆阻集成电路时,一个主要的挑战是缺乏类似spice的模拟器来进行设计验证。目前的方法是用等效电路描述忆阻器器件,但由于需要额外的建模组件,这种方法在大规模设计仿真中非常耗时。本文介绍了一种基于修正节点分析(MNA)框架的忆阻器SPICE模拟器,该模拟器能有效支持忆阻器掺杂比等非常规状态变量。因此,忆阻器器件可以像一个BSIM MOSFET一样被冲压成状态矩阵。与等效电路仿真方法相比,我们的基于MNA的新方法对32×32忆阻交叉栅电路的仿真时间缩短了40倍。本文还利用所开发的SPICE模拟器研究了用于经典调理训练的混合CMOS忆阻电路。
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SPICE simulator for hybrid CMOS memristor circuit and system
Memristor is a two-terminal non-linear passive electrical device. After its recently successful fabrication, a variety of applications based on memristor have been explored, such as non-volatile memory, reconfigurable computing and neural network. However, one major challenge when designing hybrid CMOS memristor integrated circuit is the lack of SPICE-like simulator for design validation. Current approach is to describe memristor device with equivalent circuit, which is however extremely time-consuming for large scale design simulation due to additional modeling components. In this paper, a memristor SPICE simulator is introduced based on the recent new modified nodal analysis (MNA) framework, which can effectively support the non-conventional state variable such as doping ratio of memristor. As such, the memristor device can be stamped into state matrix similarly as one BSIM MOSFET. Compared with equivalent circuit simulation approach, our new MNA based approach exhibits 40x less simulation time for a 32×32 memristor crossbar circuit. A hybrid CMOS memristor circuit for classic conditioning training has also been studied by the developed SPICE simulator.
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