{"title":"ku波段正交换能器(OMT)的设计与全波电磁仿真","authors":"M. Latif, A. U. Salfi, M. Shafique","doi":"10.1109/IBCAST.2013.6512178","DOIUrl":null,"url":null,"abstract":"The paper describes the design and full-wave EM simulation of Ku-band (10.7-14.5) GHz orthomode transducer (OMT). The OMT designed is class 2 (symmetric OMT) which has higher fractional bandwidth and cross-polarization isolation than the class 1 OMT. It is realized with Modified Bfifot junction where the tuning pins are replaced with well placed capacitive steps. Moreover septum is four times thicker than conventional class 2 OMT, making it realizable up to 1 THz frequency. Cross-polarization isolation ≥ 80 dB and return loss ≥ 20 dB are achieved in the entire band. Effect of manufacturing tolerances and assembly misalignment are incorporated d the full-wave EM simulation. All the simulation & optimization work is done in industry standard EM Simulation software.","PeriodicalId":276834,"journal":{"name":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Design & full-wave EM simulation of Ku-band orthomode transducer (OMT)\",\"authors\":\"M. Latif, A. U. Salfi, M. Shafique\",\"doi\":\"10.1109/IBCAST.2013.6512178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes the design and full-wave EM simulation of Ku-band (10.7-14.5) GHz orthomode transducer (OMT). The OMT designed is class 2 (symmetric OMT) which has higher fractional bandwidth and cross-polarization isolation than the class 1 OMT. It is realized with Modified Bfifot junction where the tuning pins are replaced with well placed capacitive steps. Moreover septum is four times thicker than conventional class 2 OMT, making it realizable up to 1 THz frequency. Cross-polarization isolation ≥ 80 dB and return loss ≥ 20 dB are achieved in the entire band. Effect of manufacturing tolerances and assembly misalignment are incorporated d the full-wave EM simulation. All the simulation & optimization work is done in industry standard EM Simulation software.\",\"PeriodicalId\":276834,\"journal\":{\"name\":\"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IBCAST.2013.6512178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IBCAST.2013.6512178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design & full-wave EM simulation of Ku-band orthomode transducer (OMT)
The paper describes the design and full-wave EM simulation of Ku-band (10.7-14.5) GHz orthomode transducer (OMT). The OMT designed is class 2 (symmetric OMT) which has higher fractional bandwidth and cross-polarization isolation than the class 1 OMT. It is realized with Modified Bfifot junction where the tuning pins are replaced with well placed capacitive steps. Moreover septum is four times thicker than conventional class 2 OMT, making it realizable up to 1 THz frequency. Cross-polarization isolation ≥ 80 dB and return loss ≥ 20 dB are achieved in the entire band. Effect of manufacturing tolerances and assembly misalignment are incorporated d the full-wave EM simulation. All the simulation & optimization work is done in industry standard EM Simulation software.