{"title":"使用 Elementwise 压印印章进行紫外线纳米压印光刻技术","authors":"Jun‐ho Jeong, Y. Sim, H. Sohn, Eung-sug Lee","doi":"10.1109/ICMENS.2004.150","DOIUrl":null,"url":null,"abstract":"Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. In an attempt to apply a large area stamp to UV-NIL in a low vacuum environment, we have proposed a new UV-NIL process using an element-wise embossed stamp (EES), which consists of a number of elements, each of which is separated by channels. Nano-scale patterns of each element were fabricated using e-beam lithography and an etching process in which a Cr film was employed as a hard mask for transferring nanostructures to a quartz plate. Before pressing the EES, low viscosity resin droplets with a nano-liter volume were dispensed on each element of the EES. Experiments on UV-NIL were performed on an EVG620-NIL. 380 nm - 1 µm features of the EES were successfully transferred to 4 in. wafers. We measured patterns and residual layers on the imprinted wafers to evaluate the potential of the proposed process. Experiments showed that the EES enables UV-NIL using a large-area stamp in a low vacuum environment.","PeriodicalId":344661,"journal":{"name":"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"UV Nanoimprint Lithography Using an Elementwise Embossed Stamp\",\"authors\":\"Jun‐ho Jeong, Y. Sim, H. Sohn, Eung-sug Lee\",\"doi\":\"10.1109/ICMENS.2004.150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. In an attempt to apply a large area stamp to UV-NIL in a low vacuum environment, we have proposed a new UV-NIL process using an element-wise embossed stamp (EES), which consists of a number of elements, each of which is separated by channels. Nano-scale patterns of each element were fabricated using e-beam lithography and an etching process in which a Cr film was employed as a hard mask for transferring nanostructures to a quartz plate. Before pressing the EES, low viscosity resin droplets with a nano-liter volume were dispensed on each element of the EES. Experiments on UV-NIL were performed on an EVG620-NIL. 380 nm - 1 µm features of the EES were successfully transferred to 4 in. wafers. We measured patterns and residual layers on the imprinted wafers to evaluate the potential of the proposed process. Experiments showed that the EES enables UV-NIL using a large-area stamp in a low vacuum environment.\",\"PeriodicalId\":344661,\"journal\":{\"name\":\"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMENS.2004.150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMENS.2004.150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
UV Nanoimprint Lithography Using an Elementwise Embossed Stamp
Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. In an attempt to apply a large area stamp to UV-NIL in a low vacuum environment, we have proposed a new UV-NIL process using an element-wise embossed stamp (EES), which consists of a number of elements, each of which is separated by channels. Nano-scale patterns of each element were fabricated using e-beam lithography and an etching process in which a Cr film was employed as a hard mask for transferring nanostructures to a quartz plate. Before pressing the EES, low viscosity resin droplets with a nano-liter volume were dispensed on each element of the EES. Experiments on UV-NIL were performed on an EVG620-NIL. 380 nm - 1 µm features of the EES were successfully transferred to 4 in. wafers. We measured patterns and residual layers on the imprinted wafers to evaluate the potential of the proposed process. Experiments showed that the EES enables UV-NIL using a large-area stamp in a low vacuum environment.