Creating dynamic nanowire devices using wrapped gates

Semiconducting nanowires (NWs) constitute an interesting platform as building blocks for various types of devices as well as for studies of fundamental material transport properties in one dimension. Nanowires have many interesting properties, such as the ability to incorporate strongly lattice-mismatched material combinations along its axis due to radial relaxation of interface strain. Furthermore, its inherent cylindrical geometry makes it an ideal candidate for devices implementing gates wrapped around the nanowire channel; the optimal geometry for maximum gate to channel coupling.