T. Suga, M. Howlader, T. Itoh, C. Inaka, Y. Arai, A. Yamauchi
{"title":"一种采用表面活化键合(SAB)概念的超高精度晶圆键合机","authors":"T. Suga, M. Howlader, T. Itoh, C. Inaka, Y. Arai, A. Yamauchi","doi":"10.1109/ECTC.2001.927935","DOIUrl":null,"url":null,"abstract":"A robot-controlled wafer bonding machine was developed for the bonding of different sizes of wafers ranging up to 8 inches diameter. The features of this equipment are such that: (1) After the automatic parallel adjustment for 8-inch wafers to a margin of error within /spl plusmn/1 /spl mu/m, the X, Y, and /spl theta/ axis alignments are performed, allowing a margin of error within /spl plusmn/0.5 /spl mu/m in bonding accuracy; and (2) Room-temperature bonding is enabled using the surface activated (SAB) bonding concept. 8-inch diameter silicon wafers ware successfully bonded by the SAB process at room temperature for the first time. Preliminary investigations across the interface using an Infrared camera show that no bubbles are visibly present in the bonding region.","PeriodicalId":340217,"journal":{"name":"2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A new wafer-bonder of ultra-high precision using surface activated bonding (SAB) concept\",\"authors\":\"T. Suga, M. Howlader, T. Itoh, C. Inaka, Y. Arai, A. Yamauchi\",\"doi\":\"10.1109/ECTC.2001.927935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A robot-controlled wafer bonding machine was developed for the bonding of different sizes of wafers ranging up to 8 inches diameter. The features of this equipment are such that: (1) After the automatic parallel adjustment for 8-inch wafers to a margin of error within /spl plusmn/1 /spl mu/m, the X, Y, and /spl theta/ axis alignments are performed, allowing a margin of error within /spl plusmn/0.5 /spl mu/m in bonding accuracy; and (2) Room-temperature bonding is enabled using the surface activated (SAB) bonding concept. 8-inch diameter silicon wafers ware successfully bonded by the SAB process at room temperature for the first time. Preliminary investigations across the interface using an Infrared camera show that no bubbles are visibly present in the bonding region.\",\"PeriodicalId\":340217,\"journal\":{\"name\":\"2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2001.927935\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2001.927935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new wafer-bonder of ultra-high precision using surface activated bonding (SAB) concept
A robot-controlled wafer bonding machine was developed for the bonding of different sizes of wafers ranging up to 8 inches diameter. The features of this equipment are such that: (1) After the automatic parallel adjustment for 8-inch wafers to a margin of error within /spl plusmn/1 /spl mu/m, the X, Y, and /spl theta/ axis alignments are performed, allowing a margin of error within /spl plusmn/0.5 /spl mu/m in bonding accuracy; and (2) Room-temperature bonding is enabled using the surface activated (SAB) bonding concept. 8-inch diameter silicon wafers ware successfully bonded by the SAB process at room temperature for the first time. Preliminary investigations across the interface using an Infrared camera show that no bubbles are visibly present in the bonding region.
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