热驱动悬臂结构非热砷化镓VCSEL阵列多波长集成的研究

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516120

N. Nakata, H. Sano, A. Matsutani, F. Koyama

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引用次数: 2

摘要

我们提出了一种具有热驱动悬臂的多波长非热VCSEL阵列。光刻定义的悬臂结构可实现片上多波长集成。实验表明，不同悬臂长度的2-ch VCSEL阵列的波长间距为20 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proposal of multi-wavelength integration of athermal GaAs VCSEL array with thermally actuated cantilever structure

We propose a multi-wavelength and athermal VCSEL array with thermally-actuated cantilevers. The lithography-defined cantilever structure enables on-chip multi-wavelength integration. The experiment shows the wavelength spacing of 20 nm for 2-ch VCSEL array with different cantilever lengths.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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