{"title":"基于自动噪声和散射参数测量的伪晶hemt的统计建模","authors":"A. Caddemi, G. Martines, M. Sannino","doi":"10.1109/CORNEL.1993.303089","DOIUrl":null,"url":null,"abstract":"A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. A modeling procedure exploiting both scattering and noise parameters has been employed to extract the equivalent circuit which gives the best fit of the experimental data. Results are reported concerning the complete characterization and modeling of a series of ten pseudomorphic HEMTs in the 8-16 GHz range.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements\",\"authors\":\"A. Caddemi, G. Martines, M. Sannino\",\"doi\":\"10.1109/CORNEL.1993.303089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. A modeling procedure exploiting both scattering and noise parameters has been employed to extract the equivalent circuit which gives the best fit of the experimental data. Results are reported concerning the complete characterization and modeling of a series of ten pseudomorphic HEMTs in the 8-16 GHz range.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303089\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements
A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. A modeling procedure exploiting both scattering and noise parameters has been employed to extract the equivalent circuit which gives the best fit of the experimental data. Results are reported concerning the complete characterization and modeling of a series of ten pseudomorphic HEMTs in the 8-16 GHz range.<>
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