基于激光全息光刻工艺的垂直有机场效应晶体管阵列制造

Donghyun Kim, Yongtaek Hong
{"title":"基于激光全息光刻工艺的垂直有机场效应晶体管阵列制造","authors":"Donghyun Kim, Yongtaek Hong","doi":"10.1109/DRC.2011.5994432","DOIUrl":null,"url":null,"abstract":"Due to the handiness in obtaining a short channel length, vertical organic field-effect transistors (VOFETs) have been pointed as an alternative form of conventional organic thin-film transistor (OTFT). With VOFET structure, it is relatively simple to obtain an short channel length and a large channel width-to-length ratio (W/L) value in a restricted device area, so a large current driving capability which can hardly be achieved with organic semiconductor, can be realized. Moreover, VOFETs can be utilized as a platform for many kinds of electrical applications associated with other various functional devices such as organic light-emitting diodes (OLEDs) and sensors.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Vertical organic field-effect transistor array fabrication based on laser holography lithography process\",\"authors\":\"Donghyun Kim, Yongtaek Hong\",\"doi\":\"10.1109/DRC.2011.5994432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to the handiness in obtaining a short channel length, vertical organic field-effect transistors (VOFETs) have been pointed as an alternative form of conventional organic thin-film transistor (OTFT). With VOFET structure, it is relatively simple to obtain an short channel length and a large channel width-to-length ratio (W/L) value in a restricted device area, so a large current driving capability which can hardly be achieved with organic semiconductor, can be realized. Moreover, VOFETs can be utilized as a platform for many kinds of electrical applications associated with other various functional devices such as organic light-emitting diodes (OLEDs) and sensors.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

垂直有机场效应晶体管(vofet)由于易于获得短沟道长度,已被认为是传统有机薄膜晶体管(OTFT)的替代形式。利用VOFET结构,可以相对简单地在受限的器件面积内获得较短的通道长度和较大的通道宽长比(W/L)值,从而实现有机半导体难以实现的大电流驱动能力。此外,vofet可以用作与其他各种功能器件(如有机发光二极管(oled)和传感器)相关的多种电气应用的平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Vertical organic field-effect transistor array fabrication based on laser holography lithography process
Due to the handiness in obtaining a short channel length, vertical organic field-effect transistors (VOFETs) have been pointed as an alternative form of conventional organic thin-film transistor (OTFT). With VOFET structure, it is relatively simple to obtain an short channel length and a large channel width-to-length ratio (W/L) value in a restricted device area, so a large current driving capability which can hardly be achieved with organic semiconductor, can be realized. Moreover, VOFETs can be utilized as a platform for many kinds of electrical applications associated with other various functional devices such as organic light-emitting diodes (OLEDs) and sensors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Technical program committee Rump sessions Circuit applications based on solution-processed zinc-tin oxide TFTs 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Effect of disorder on superfluidity in double layer graphene
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1