砷化镓纳米线光电探测器的光电特性

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472399

H. Wang, P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, L. Fu, F. Karouta, H. Tan, C. Jagadish

{"title":"砷化镓纳米线光电探测器的光电特性","authors":"H. Wang, P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, L. Fu, F. Karouta, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472399","DOIUrl":null,"url":null,"abstract":"A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"75 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optoelectronic properties of GaAs nanowire photodetector\",\"authors\":\"H. Wang, P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, L. Fu, F. Karouta, H. Tan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2012.6472399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"75 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

基于背靠背肖特基二极管结构制备了单砷化镓纳米线光电探测器(PD)。通过测量器件的光电流和光谱响应来表征器件的光电性能，表明该器件具有很高的灵敏度，可作为PD器件使用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Optoelectronic properties of GaAs nanowire photodetector

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

COMMAD 2012

自引率

0.00%

发文量