{"title":"磷光和热激发发光强度与固定x射线发光强度之比","authors":"N. Pavlova, V. Degoda, G. Podust","doi":"10.1109/OMEE.2014.6912443","DOIUrl":null,"url":null,"abstract":"Comparative analysis of the experimental results of X-ray luminescence, phosphorescence and thermally-stimulated luminescence intensities for different emission bands in ZnSe revealed that for 630 nm luminescence centers there are two recombination mechanisms existing - electron and hole.","PeriodicalId":142377,"journal":{"name":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity\",\"authors\":\"N. Pavlova, V. Degoda, G. Podust\",\"doi\":\"10.1109/OMEE.2014.6912443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Comparative analysis of the experimental results of X-ray luminescence, phosphorescence and thermally-stimulated luminescence intensities for different emission bands in ZnSe revealed that for 630 nm luminescence centers there are two recombination mechanisms existing - electron and hole.\",\"PeriodicalId\":142377,\"journal\":{\"name\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2014.6912443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2014.6912443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity
Comparative analysis of the experimental results of X-ray luminescence, phosphorescence and thermally-stimulated luminescence intensities for different emission bands in ZnSe revealed that for 630 nm luminescence centers there are two recombination mechanisms existing - electron and hole.
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