{"title":"高电流密度下c掺杂InP/InGaAs/InP HBTs的可靠性研究","authors":"K. Feng, N. Nguyen, C. Nguyen","doi":"10.1109/GAASRW.2003.183771","DOIUrl":null,"url":null,"abstract":"Abstrad In this paper, we demonstrated that with our proprietary device design and process technology, GCS’s InP HBTs show excellent reliability under high current density lifetests. Both Va. and emitter resistance are very stable during ISOkA/cm’ stressing, which indicates that the Cdoped InP HBT is potentially much more stable compared lo Be-doped InP HBT for high current density operation. No low activation energy (<O.SeV) failure mode was found for out C-doped InP HBTs. The extracted activation energy is greater than 0.97eV. The estimated MTTF at 125°C is over 3 million hours for device operating at 150kAicmz current density.","PeriodicalId":431077,"journal":{"name":"Proceedings GaAs Reliability Workshop, 2003.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Investigation of reliability for C-doped InP/InGaAs/InP HBTs under high current density operation\",\"authors\":\"K. Feng, N. Nguyen, C. Nguyen\",\"doi\":\"10.1109/GAASRW.2003.183771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstrad In this paper, we demonstrated that with our proprietary device design and process technology, GCS’s InP HBTs show excellent reliability under high current density lifetests. Both Va. and emitter resistance are very stable during ISOkA/cm’ stressing, which indicates that the Cdoped InP HBT is potentially much more stable compared lo Be-doped InP HBT for high current density operation. No low activation energy (<O.SeV) failure mode was found for out C-doped InP HBTs. The extracted activation energy is greater than 0.97eV. The estimated MTTF at 125°C is over 3 million hours for device operating at 150kAicmz current density.\",\"PeriodicalId\":431077,\"journal\":{\"name\":\"Proceedings GaAs Reliability Workshop, 2003.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings GaAs Reliability Workshop, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2003.183771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings GaAs Reliability Workshop, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2003.183771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of reliability for C-doped InP/InGaAs/InP HBTs under high current density operation
Abstrad In this paper, we demonstrated that with our proprietary device design and process technology, GCS’s InP HBTs show excellent reliability under high current density lifetests. Both Va. and emitter resistance are very stable during ISOkA/cm’ stressing, which indicates that the Cdoped InP HBT is potentially much more stable compared lo Be-doped InP HBT for high current density operation. No low activation energy (
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
