高性能CsPbI3 NCs修饰的少层WS2混合光电探测器

Shreyasi Das, A. Ghorai, Sourabh Pal, S. Mahato, Soumen K. Das, S. Ray
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引用次数: 0

摘要

具有高载流子迁移率的有效半导体层和高光吸收材料是实现光电探测器器件高响应的一种有前途的器件结构。在这里,我们报道了一种优越的宽带可见光探测器,该探测器在杂化异质结中使用几层二硫化钨(WS2)和碘化铯铅(CsPbI3)纳米晶体(NCs)装饰。与原始WS2相比,CsPbI3 NCs修饰的WS2 0D/2D混合纳米结构的光电流增强,揭示了混合系统在下一代光电器件中的潜力。
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High Performance CsPbI3 NCs Decorated Few-layer WS2 Hybrid Photodetectors
A promising device architecture that can achieve high response in photodetector devices can be consists of an effective semiconductor layer with high carrier mobility and highly photoabsorbing material. Here, we report a superior broadband visible photodetector with a few-layer tungsten disulfide (WS2) decorated with cesium lead iodide (CsPbI3) nano-crystals (NCs) in hybrid heterojunctions. An enhancement in photocurrent is demonstrated in the CsPbI3 NCs decorated WS2 0D/2D hybrid nanostructure compared to pristine WS2, revealing the potential of hybrid systems in next generation optoelectronic devices.
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