{"title":"1.68μJ/签名生成物联网设备的256位ECDSA over GF(p)签名发生器","authors":"Masato Tamura, M. Ikeda","doi":"10.1109/ASSCC.2016.7844205","DOIUrl":null,"url":null,"abstract":"We have designed and fabricated a 256-bit elliptic curve digital signature algorithm (ECDSA) on a GF(p) signature generation processor in SOTB 65-nm CMOS. We have optimized the pipeline architecture of the Montgomery multiplier by exploiting parallelism, and have achieved 1/50 energy consumption for signature generation, as compared with the previously reported state-of-the-art. Our processor showed correct operation under a wide range of power supply voltages (Vdd) from 1.1 V to 0.25 V, realized a signature generation time (Tsg) of 325 μs at Vdd of 1.1 V and a body bias of VBP = 0.55 V and VBN = 0.55 V, Tsg of 2.3 ms and an energy consumption of 1.68 μJ at Vdd of 0.3 V and a body bias of VBP = 0.3 V and VBN = 0 V, and Tsg of 11 ms and a power consumption of 0.15 mW at Vdd of 0.25 V and a body bias of VBP = 0.37 V and VBN = −0.12 V. Our design demonstrated the lowest power/energy value ever reported and the fastest signature generation ever reported in real silicon.","PeriodicalId":278002,"journal":{"name":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"1.68μJ/signature-generation 256-bit ECDSA over GF(p) signature generator for IoT devices\",\"authors\":\"Masato Tamura, M. Ikeda\",\"doi\":\"10.1109/ASSCC.2016.7844205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have designed and fabricated a 256-bit elliptic curve digital signature algorithm (ECDSA) on a GF(p) signature generation processor in SOTB 65-nm CMOS. We have optimized the pipeline architecture of the Montgomery multiplier by exploiting parallelism, and have achieved 1/50 energy consumption for signature generation, as compared with the previously reported state-of-the-art. Our processor showed correct operation under a wide range of power supply voltages (Vdd) from 1.1 V to 0.25 V, realized a signature generation time (Tsg) of 325 μs at Vdd of 1.1 V and a body bias of VBP = 0.55 V and VBN = 0.55 V, Tsg of 2.3 ms and an energy consumption of 1.68 μJ at Vdd of 0.3 V and a body bias of VBP = 0.3 V and VBN = 0 V, and Tsg of 11 ms and a power consumption of 0.15 mW at Vdd of 0.25 V and a body bias of VBP = 0.37 V and VBN = −0.12 V. Our design demonstrated the lowest power/energy value ever reported and the fastest signature generation ever reported in real silicon.\",\"PeriodicalId\":278002,\"journal\":{\"name\":\"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"2014 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2016.7844205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2016.7844205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.68μJ/signature-generation 256-bit ECDSA over GF(p) signature generator for IoT devices
We have designed and fabricated a 256-bit elliptic curve digital signature algorithm (ECDSA) on a GF(p) signature generation processor in SOTB 65-nm CMOS. We have optimized the pipeline architecture of the Montgomery multiplier by exploiting parallelism, and have achieved 1/50 energy consumption for signature generation, as compared with the previously reported state-of-the-art. Our processor showed correct operation under a wide range of power supply voltages (Vdd) from 1.1 V to 0.25 V, realized a signature generation time (Tsg) of 325 μs at Vdd of 1.1 V and a body bias of VBP = 0.55 V and VBN = 0.55 V, Tsg of 2.3 ms and an energy consumption of 1.68 μJ at Vdd of 0.3 V and a body bias of VBP = 0.3 V and VBN = 0 V, and Tsg of 11 ms and a power consumption of 0.15 mW at Vdd of 0.25 V and a body bias of VBP = 0.37 V and VBN = −0.12 V. Our design demonstrated the lowest power/energy value ever reported and the fastest signature generation ever reported in real silicon.