快速高k AIN MONOS内存，内存窗口大，保留率好

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553074

C. Lai, C.C. Huang, K. Chiang, H. Kao, W. Chen, A. Chin, C. Chi

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引用次数: 4

摘要

我们在新的IrO2-HfAlO-AlN-SiO2-Si MONOS器件中获得了快速100mus程序的良好非易失性存储器完整性和在plusmn13V下的1ms擦除时间，4.5V的大初始存储器窗口，以及在25℃或85℃下的3.8V或2.4V的外推10年存储器窗口

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Fast high-k AIN MONOS memory with large memory window and good retention

We have obtained good non-volatile memory device integrity of fast 100mus program and 1ms erase time at plusmn13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85degC in the new IrO2-HfAlO-AlN-SiO2-Si MONOS device

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63rd Device Research Conference Digest, 2005. DRC '05.

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