Investigation of the Dynamic Thermal Characteristic in Bulk FinFET

Knowledge of thermal characteristic in device is valuable to thermal management determination. In this paper, the dynamic thermal characteristic of bulk FinFET is investigated with an analytic method of thermal impedance extraction. The validation of this method is confirmed with the model of smallsignal Y-parameters at low frequency. The results show that, although the saturation current is relatively small, the associated temperature rise is very significant. As comparison, dynamic thermal behavior of SOI is also investigated. The results provide a reliable base for the selection of thermal management algorithms for the circuits carrying various frequency components. This method is easy to scale and adjust to device with different dimension and fabrication processes.