SOI FinFET器件电阻性失效的单片机与纳米探测相结合研究

EDFA Technical Articles Pub Date : 2020-05-01 DOI:10.31399/asm.edfa.2020-2.p022

Lucile C. Teague Sheridan, D. Nedeau

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引用次数: 1

摘要

扫描电容显微镜(SCM)和纳米探针是隔离和了解晶体管级故障的关键工具。在本案例研究中，在标准FIB横截面成像未能显示任何可见缺陷后，使用SCM和纳米探针来确定14nm SOI FinFET SRAM中簇型故障的电特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Combined SCM and Nanoprobing Study of Resistive Fails on SOI FinFET Devices

Scanning capacitance microscopy (SCM) and nanoprobing are key tools for isolating and understanding transistor level fails. In this case study, SCM and nanoprobing are used to determine the electrical characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects.

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