{"title":"TiOx薄膜厚度对TiN/TiOx/HfO2/Pt RRAM器件阻性开关性能的影响","authors":"Xiangxiang Ding, Lifeng Liu, Yulin Feng, Peng Huang","doi":"10.23919/SNW.2019.8782976","DOIUrl":null,"url":null,"abstract":"In this work, TiN/TiO<inf>x</inf>/HfO<inf>2</inf>/Pt resistive random access memory (RRAM) devices with different TiO<inf>x</inf> film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiO<inf>x</inf> film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiO<inf>x</inf> film under pulse measurement shows as fast as 20ns pulse width and can be cycled for 1e6 cy.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device\",\"authors\":\"Xiangxiang Ding, Lifeng Liu, Yulin Feng, Peng Huang\",\"doi\":\"10.23919/SNW.2019.8782976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, TiN/TiO<inf>x</inf>/HfO<inf>2</inf>/Pt resistive random access memory (RRAM) devices with different TiO<inf>x</inf> film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiO<inf>x</inf> film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiO<inf>x</inf> film under pulse measurement shows as fast as 20ns pulse width and can be cycled for 1e6 cy.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device
In this work, TiN/TiOx/HfO2/Pt resistive random access memory (RRAM) devices with different TiOx film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiOx film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiOx film under pulse measurement shows as fast as 20ns pulse width and can be cycled for 1e6 cy.
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